DDR 400MHz DDRII Memory Module
Company Info
Company Published: 2007
Online Postings: Products , Selling Leads
Country/Territory: China
Business Type: Manufacturer
Number of Employees: 101 - 500 People
Online Postings: Products , Selling Leads
Country/Territory: China
Business Type: Manufacturer
Number of Employees: 101 - 500 People
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Terms of Payment: T/T,Western Union
Delivery Lead Time: within 3 days
Detailed Product Description
1. DDR 400MHz
2. 184-pin socket type dual in line memory module (DIMM)
3. 2.6V power supply
4. Data rate: 400Mbps (max.)
5. 2.5 V (SSTL-2 compatible) I/O
6. Double data rate architecture, two data transfers per clock
7. Bi-directional, data strobe (DQS) is transmitted/received with data, to be used in capturing data at the receiver
8. Data inputs and outputs are synchronized with DQS
9. DQS is edge aligned with data for read, center aligned with data for write
10. Differential clock inputs (CK and CK)
11. DLL aligns DQ and DQS transitions with CK transitions
12. Commands entered on each positive CK edge, data referenced to both edges of DQS
13. Auto precharge option for each burst access
14. Programmable burst length: 2, 4, 8
15. Programmable/CAS latency (CL): 3
16. Programmable output driver strength: normal/weak
17. Refresh cycles: (8192 refresh cycles/64ms)
18. 7.8US maximum average periodic refresh interval
19. 2 variations of refresh
20. Auto refresh
21. Self refresh
1. DDR 400MHz
2. 184-pin socket type dual in line memory module (DIMM)
3. 2.6V power supply
4. Data rate: 400Mbps (max.)
5. 2.5 V (SSTL-2 compatible) I/O
6. Double data rate architecture, two data transfers per clock
7. Bi-directional, data strobe (DQS) is transmitted/received with data, to be used in capturing data at the receiver
8. Data inputs and outputs are synchronized with DQS
9. DQS is edge aligned with data for read, center aligned with data for write
10. Differential clock inputs (CK and CK)
11. DLL aligns DQ and DQS transitions with CK transitions
12. Commands entered on each positive CK edge, data referenced to both edges of DQS
13. Auto precharge option for each burst access
14. Programmable burst length: 2, 4, 8
15. Programmable/CAS latency (CL): 3
16. Programmable output driver strength: normal/weak
17. Refresh cycles: (8192 refresh cycles/64ms)
18. 7.8US maximum average periodic refresh interval
19. 2 variations of refresh
20. Auto refresh
21. Self refresh
DDR 400MHz DDRII Memory Module
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Contact Us
Shenzhen Hailan Info - Tech Co., Ltd.
[China]
Street Address : Room 17D, Building A, Caifu Mansion, South Caitian Road, Futian District, Shenzhen City, Guangdong Province, China
City : Shenzhen
Province/State : Guangdong
Country/Region : China
